HieFo launches high-efficiency CW lasers for silicon photonics transceivers
The company says its uncooled O-band CW laser family offers the industry a new standard in terms of proven field reliability and performance, for high-operating-temperature non-hermetic applications
HieFo has announced the product launch of multiple new high-efficiency continuous-wave DFB indium phosphide (InP) lasers, designed to address the ever-increasing demands of silicon photonics-based optical transceivers.
According to HieFo, its uncooled O-band CW laser family supports the CWDM4 wavelength plan over an operating temperature of -5 to 75 degrees C, while maintaining 70 mW minimum optical output power. These performance parameters are achieved using an aluminium-free active quantum well design, which the company says offers the optical transceiver industry a new standard in terms of proven field reliability and performance, for high-operating-temperature non-hermetic applications.
HieFo says it has achieved new performance levels with the latest innovations on the previously released HCL30 CW DFB laser chip. Using innovations from 12 recently filed patents, the company says its 1 mm cavity length laser chip can produce above 200 mW typical optical output power while achieving sub 300 kHz spectral linewidth performance, all while achieving WPE of 30 percent or greater over a wide power range. HieFo offers custom O-band wavelength variants of this laser design for various coherent applications ranging from datacentre to PON architecture.
“HieFo’s latest product advances address the stringent performance standards required by the industry’s leading silicon photonic designs,” stated Harry Moore, HieFo’s chairman and co-founder. “HieFo continues to execute on our core mission, which is to develop and produce the most efficient and reliable InP based chips in the industry.”
