LIGENTEC unveils hybrid SiN platform
New platform combines low-loss SiN with TFLN modulators and integrated III-V photodetectors.
LIGENTEC has unveiled a new heterogeneous photonic integration platform combining thin-film lithium niobate (TFLN) modulators and III-V photodetectors with its low-loss silicon nitride (SiN) platform.
Announced at ECOC 2026 in Málaga, the platform expands LIGENTEC’s SiN PIC offering into an active-passive photonic platform targeting AI optical interconnects, high-speed optical communications, optical circuit switching and quantum applications.
The company said TFLN electro-optic modulators integrated on SiN can achieve bandwidths exceeding 100 GHz with drive voltages below 2 V. Integrated III-V photodetectors offer high responsivity at C-band and O-band, with sub-picosecond response times.
The platform retains SiN propagation losses below 1 dB/m, supporting applications including high-Q optical microresonators, narrow-linewidth laser coupling, optical circuit switching and dense wavelength division multiplexing.
LIGENTEC said the approach is designed to address increasing bandwidth and integration requirements as AI data centre architectures move towards 1.6T and beyond.
The company is also celebrating its 10th anniversary at ECOC, having been founded in 2016 to commercialise low-loss SiN PIC technology. LIGENTEC is demonstrating the latest developments at booth #1368.
