+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
Loading...
News Article

Scientists report integrated photodiodes on TFLN

News

Thin-film lithium niobate (TFLN) is often considered a promising platform for photonic integrated circuits due to its tight mode confinement, high nonlinear efficiency and wide transparency window. Chinese scientists have recently reported an ultra-wideband waveguide-coupled photodiode on the TFLN platform, achieving a 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at 1,550 nm wavelength.

Owing to its strong electro-optic coefficient and wide transparency window, lithium niobate (LN) has become an attractive photonic material. Thin-film lithium niobate (TFLN) technology has enabled tight mode confinement and high nonlinear efficiency. Various compact integrated photonics devices have been realised on the TFLN platform, such as compact high-performance modulators, polarisation management devices, and broadband frequency comb sources. However, the inherent difficulty of creating lithium niobate light sources and photodetectors poses a challenge for the TFLN integrated photonics platform. As an essential optoelectronic component, an on-chip integrated high-performance photodetector is vital for TFLN photonic integrated chips.

In a new paper published in Light: Advanced Manufacturing, a research team, led by Professor Xiaojun Xie and Lianshan Yan from Key Laboratory of Photonic-Electric Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong University, China, has reported a high-speed and high-responsivity modified uni-traveling carrier photodiode heterogeneously integrated on the TFLN platform. According to the paper, the device exhibits a 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a wavelength of 1,550-nm wavelength.

The researchers described the fabrication process as being initialised by the dry etching of LN waveguides and passive devices. A hybrid etching approach was followed to form device mesa. After metal plating and lift-off, the chips were diced and polished. The epitaxial layer structure, LN waveguide geometry, and CPW pad geometry were optimised to achieve both large bandwidth and high responsivity.

To further assess the performance of the devices, the team applied them to a data transmission system, and say they successfully detected PAM4 signals at 32 Gbaud with high quality. The researchers also say they have demonstrated that the heterogeneously integrated photodiodes on the TFLN platform have the potential to be applied in the next-generation high-speed transmission systems.

According to the scientists, this work paves the way to achieving massive-scale, multi-function, and high-performance TFLN photonic integrated circuits, as well as holding promise for ultra-high-speed optical communications, high-performance integrated microwave photonics, and multi-function integrated quantum photonics

EMCORE announces integration of PICs into its products
Scottish photonics consortium wins £4.7m in UKRI funding
Yuanjie Semiconductor to supply lasers to POET
Fraunhofer IPMS announces government funding for quantum photonic chip
POET Technologies partners with Yuanjie Semiconductor Technology
SiLC announces silicon photonics systems for machine vision
Scientists develop novel optical modulators for integrated photonics
Scientists report integrated photodiodes on TFLN
Coherent wins award for innovative photonics product
FBH to present quantum technology developments at EQTC 2023
Skorpios and FormericaOE demonstrate PICs in 800G optical transceivers
EFFECT Photonics verifies fully integrated InP PIC
NASA awards grant for silicon photonics project
OpenLight and Spark Photonics partner on PIC design services
DustPhotonics announces 800G chip for hyperscale data centres and AI
Lightwave Logic Receives Industry Innovation Award
Imec announces SiGe BiCMOS optical receiver
SiFotonics announces silicon photonics 800G LPO solutions
Rockley Photonics progresses noninvasive biomarker monitoring
MantiSpectra secures €4 million for miniaturised spectrometers
Sivers to demo next-gen laser arrays at ECOC 2023
ASMPT AMICRA and Teramount collaborate on silicon photonics packaging
Quantum Computing Inc. selects Arizona site for photonic chip foundry
German government to fund ams OSRAM optoelectronic semiconductor development
Luceda Photonics introduces new PIC design software
Vodafone explores silicon photonics for future mobile networks
Coherent introduces 1200 mW pump laser module
Photonics startups invited to apply to Luminate NY accelerator
New tool could improve lithography for smaller, faster chips
InP-based lasers surpass 2.2 mm
Indie Semiconductor buys Exalos AG
New technique controls direction and wavelength of emitted heat

×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the PIC Magazine, the PIC Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: