Info
Info

EU Project To Combine InP Quantum Dots And SiN

News
MOICANA collaboration is bringing together four industrial partners and four academic and research institutes in the PIC and photonic systems value chain

The wide-spread adoption of optical transceivers in a broad range of applications is urgently calling for a low-cost, high power efficient and large volume manufacturing integration technology that can meet the different specifications required in every application sector.

Current solutions favour silicon photonics based technologies that still feature a major drawback: namely they need complex and expensive hybrid integration substrates, since they rely on externally coupled InP laser sources for the final assembly. Meanwhile, the testing for the pre- and post- processed coupled laser adds further costs.

MOICANA is a new ambitious EU H2020 R&D Project which was launched early in 2018. It aims to develop fundamental innovations in the field of photonic integrated transmitters, making them cheaper and more power efficient.

The consortium is bringing together four industrial partners, and four academic and research institutes in the PIC and Photonic Systems value chain. The project participants are the Aristotle University of Thessaloniki (Greece), University of Kassel (Germany), Technion- Technical University of Israel (Israel), III-V lab (France), Mellanox Technologies (Israel), Ligentec (Switzerland), ADVA (Germany) and VLC Photonics (Spain).
MOICANA is funded under the H2020 ICT 2016-2017 "“ Photonics KET Call and the initiative of the Photonics Public Private Partnership. The project is coordinated by Aristotle University of Thessaloniki in Greece and will be running through to December 2020.

MOICANA aims to demonstrate breakthrough performance by combining Quantum Dot InP structures as the III-V light source material and SiN from the silicon photonics for the passive platform. The ideas is to minimise the cost of high volume fabrication of optical transmitters through the development of technology for epitaxy of the QD InP components directly on Si by selective area growth.

The project partners aim to the demonstrations of a whole new series of cooler-less, energy-efficient and high-performance single-channel and WDM transmitter modules for data centre interconnects, for 5G Mobile fronthaul and for coherent communication applications.


Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the PIC Magazine, the PIC Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info