CST Global Appoints New Principal Device Development Engineer
Susannah Heck brings a wealth of technical experience in opto-electronic integration, device and process design to UK III-V fab
CST Global - a UK-based III-V foundry - has appointed Susannah Heck as principal device development engineer.
Heck was previously principal engineer at Kaiam in Livingston, West Lothian, and senior research and development engineer at Oclaro, Northamptonshire. She has been both programme manager and technical lead on projects including next-generation, 100G, data centre, opto-electronic hardware design, development and verification.
Andrew McKee, technical director at CST Global, commented: “Susannah brings a wealth of technical experience in monolithic and hybrid opto-electronic integration; active and passive device design and verification on III-V compound semiconductors; and epitaxy, lithographic-mask and process design for wafer production. She also brings invaluable project planning, budgeting, resource allocation and management expertise, with exceptional communication skills."
Susannah began her working career as a research intern at the Tyndall National Institute, University College Cork before becoming a research associate in the Experimental Solid-State Physics department, at Imperial College London.
Susannah has a BSc Hons and PhD in Physics, from University College Cork, specialising in characterisation of quantum dot and dash devices; material properties related to quantum dot anisotropy; and threshold current and efficiency of III-V semiconductor lasers.
She is the author and co-author of a number of respected journals and conference papers in the photonics field.